钱庆凯 博士 副教授

个人简历

2008-2012年：清华大学物理系学士学位

2012-2014年：清华大学物理系硕士学位

2014-2018年：香港科技大学电子及计算机工程系博士学位

                                         2019-2020年：美国宾夕法尼亚州立大学电机工程系博士后

                                         2021年-至今 ： 男人J桶进女人P无遮挡副教授

 

研究方向

1. 光电探测器、太阳能电池、发光器件等光电子器件应用研究

2. 光电功能材料性质的第一性原理计算

 

研究成果

主要从事光电子器件应用研究和相关光电材料性能的第一性原理计算。在相关领域的国际期刊及会议共发表学术论文30余篇，获批美国专利2项，其中以第一作者发表期刊论文11篇，全部为SCI收录，包括纳米技术、应用物理、理论物理和物理化学等领域的国际权威期刊ACS Nano, npj 2D Materials and Applications, Nanoscale，Physical Review B等，多次参加物理、材料领域国际顶级会议和担任Nano Letters, ACS Appl. Mater. Interfaces, J. Phys. Chem. C, J. Phys.: Condens. Matter等多个国际知名期刊审稿人。

 

相关的主要学术成果为：（1）首次提出并验证了二维材料作为栅极，宽禁带半导体氮化镓作为沟道，制备具备栅极耐压和提升沟道电流能力的新型电子器件；（2）通过氮气等离子体表面功能化实现二维材料表面的高k介质沉积和高稳定性器件的制备钝化；（3）二维材料的光学响应和性能研究，包括拉曼散射、缺陷荧光、二阶谐波产生、声子激发与超快电子衍射，以及它们在单光子发射、非线性光学方向的应用；（4）二维材料光电性质包括吸附或缺陷的拉曼散射、束缚激子荧光等相关的第一性原理计算。

 

代表论著

1.    Q. Qian, R. Zu, Q. Ji, G. S. Jung, K. Zhang, Y. Zhang, M. J. Buehler, J. Kong, V. Gopalan and S. Huang, "Chirality-Dependent Second Harmonic Generation of MoS₂ Nanoscroll with Enhanced Efficiency," ACS Nano 14, 13333-13342, 2020

2.    Q. Qian, X. Shen, D. Luo, L. Jia, M. Kozina, R. Li, M. Lin, A. H. Reid, S. Weathersby, J. Yang, Y. Zhou, K. Zhang, X. Wang and S. Huang, "Coherent Lattice Wobbling and Out-of-Phase Intensity Oscillations of Friedel Pairs Observed by Ultrafast Electron Diffraction," ACS Nano 14, 8449–8458, 2020

3.    Q. Qian, L. Peng, N. Perea-Lopez, K. Fujisawa, K. Zhang, X. Zhang, T. H. Choudhury, J. M. Redwing, M. Terrones, X. Ma, and S. Huang, "Defect creation in WSe₂ with a microsecond photoluminescence lifetime by focused ion beam irradiation," Nanoscale 12, 2047-2056, 2020

4.    Q. Qian, J. Lei, J. Wei, Z. Zhang, G. Tang, K. Zhong, Z. Zheng, and K. J. Chen, "2D materials as semiconducting gate for field-effect transistors with inherent over-voltage protection and boosted ON-current," npj 2D Mater. Appl. 3, 24, 2019 (selected as Leading Research in Materials Science of Nature Partner Journals)

5.    Q. Qian, Z. Zhang and K. J. Chen, "Layer-dependent second-order Raman intensity of MoS₂ and WSe₂: Influence of intervalley scattering," Phys. Rev. B 97, 165409, 2018

6.    Q. Qian, Z. Zhang and K. J. Chen, "In Situ Resonant Raman Spectroscopy to Monitor the Surface Functionalization of MoS₂ and WSe₂ for High-k Integration: A First-Principles Study," Langmuir 34, 2882-2889, 2018

7.    Q. Qian, Z. Zhang, M. Hua, J. Wei, J. Lei, and K. J. Chen, "Remote N₂ plasma treatment to deposit ultrathin high-k dielectric as tunneling contact layer for single-layer MoS₂ MOSFET," Appl. Phys. Express 10, 125201, 2017

8.    Q. Qian, Z. Zhang, M. Hua, G. Tang, J. Lei, F. Lan, Y. Xu, R. Yan, and K. J. Chen, "Enhanced dielectric deposition on single layer MoS2 with low damage using remote N₂ plasma treatment," Nanotechnology 28, 175202, 2017

9.    Q. Qian, B. Li, M. Hua, Z. Zhang, F. Lan, Y. Xu, R. Yan, and K. J. Chen, "Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS₂ MOSFET with an AlN Interfacial Layer," Sci. Rep. 6, 27676, 2016

10.  Q. Qian, G. Li, Y. Jin, J. Liu, Y. Zou, K. Jiang, S. Fan, and Q. Li, "Trap-State-Dominated Suppression of Electron Conduction in Carbon Nanotube Thin-Film Transistors," ACS Nano 8, 9597, 2014

11.  Q. Qian, J. Liu, Q. Li, Y. Zou, Y. Jin, G. Li, K. Jiang, and S. Fan, "Modeling and optimization of ambipolar graphene transistors in the diffusive limit," J. Appl. Phys. 114, 164508, 2013

 

获批专利

1.    Q. Qian, Q. Li, “Thin Film Transistor,”US Patent US9548391, filed Aug. 7, 2013, and issued Jan. 17, 2017

2.    J. Chen, Q. Qian, “Field-effect transistors with semiconducting gate”, US Patent US11139374B2, filed Aug. 9, 2019, and issued Oct. 5, 2021

 

联系方式

Email：qqian@cqu.edu.cn

办公室：男人J桶进女人P无遮挡A区主教学楼1301室